elektronische bauelemente SSPS7308NA 17 a , 30 v , r ds(on) 9 m ?? n-ch enhancement mode power mosfet 09-oct-2013 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. b e f g g a e b d c d rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density tr ench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe dfn3x3-8pp saves board space ? fast switching speed ? high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellu lar and cordless telephones. package information package mpq leader size dfn3x3-8pp 3k 13 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a =25c 17 a continuous drain current 1 t a =70c i d 14 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 2.9 a t a =25c 3.5 w total power dissipation 1 t a =70c p d 2 w operating junction & stor age temperature range t j , t stg -55~150 c thermal resistance ratings t Q 10ec 35 c / w thermal resistance junction-ambient (max.) 1 steady state r ja 81 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. dfn3x3-8pp millimete r millimete r ref. min. max. ref. min. max. a 0.70 0.90 0 12 b 3.00bsc b 0.20 0.40 c 0.10 0.25 d 0.65bsc d 1.80 2.3 e 3.00bsc e3.2bsc g 0.70 ( typ. ) f 0.01 0.02 g 2.35bsc to p view
elektronische bauelemente SSPS7308NA 17 a , 30 v , r ds(on) 9 m ?? n-ch enhancement mode power mosfet 09-oct-2013 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v, v gs =0, t j =55c on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =10v - - 9 v gs =10v, i d =1a drain-source on-resistance 1 r ds(on) - - 15 m ? v gs =4.5v, i d =1a forward transconductance 1 g fs - 40 - s v ds =15v, i d =1a diode forward voltage v sd - 0.7 - v i s =1, v gs =0 dynamic 2 total gate charge q g - 10 - gate-source charge q gs - 4 - gate-drain charge q gd - 3 - nc v ds =10v v gs =4.5v i d =1a turn-on delay time t d(on) - 5 - rise time t r - 8 - turn-off delay time t d(off) - 30 - fall time t f - 10 - ns v dd =10v i d =1a v gen =10v r l =6 ? notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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